sep.2000 e c e g e e g c cm d s f a g p b j t l kk u v?ia.(4 typ.) w?6 thd. (2 typ.) x?4 thd. (2 typ.) r e c q m h n dimensions inches millimeters a 4.21 107.0 b 3.661 0.01 93.0 0.25 c 2.44 62.0 d 1.89 0.01 48.0 0.25 e 1.42 max. 36.0 max. f 1.34 34.0 g 1.18 30.0 h 1.14 29.0 j 0.98 max. 25.0 max. k 0.94 24.0 l 0.93 23.5 dimensions inches millimeters m 0.83 21.0 n 0.69 17.5 p 0.63 16.0 q 0.51 13.0 r 0.43 11.0 s 0.35 9.0 t 0.28 7.0 u 0.12 3.0 v 0.26 dia. dia. 6.5 w m6 metric m6 x m4 metric m4 description: mitsubishi igbt modules are designed for use in switching applications. each module con- sists of one igbt in a single con- figuration with a reverse- connected super-fast recovery free-wheel diode. all components and interconnects are isolated from the heat sinking baseplate, offering simplified system assem- bly and thermal management. features: u low drive power u low v ce(sat) u discrete super-fast recovery free-wheel diode u high frequency operation u isolated baseplate for easy heat sinking applications: u ac motor control u motion/servo control u ups u welding power supplies ordering information: example: select the complete part module number you desire from the table below -i.e. CM200HA-24H is a 1200v (v ces ), 200 ampere single igbt module. type current rating v ces amperes volts (x 50) cm 200 24 outline drawing and circuit diagram mitsubishi igbt modules CM200HA-24H high power switching use insulated type
sep.2000 absolute maximum ratings, t j = 25 c unless otherwise specified symbol ratings units junction temperature t j -40 to 150 c storage temperature t stg -40 to 125 c collector-emitter voltage (g-e short) v ces 1200 volts gate-emitter voltage (c-e short) v ges 20 volts collector current (t c = 25 c) i c 200 amperes peak collector current (t j 150 c) i cm 400* amperes emitter current** (t c = 25 c) i e 200 amperes peak emitter current** i em 400* amperes maximum collector dissipation (t c = 25 c) p c 1500 watts mounting torque, m6 main terminal C 1.96~2.94 n m mounting torque, m6 mounting C 1.96~2.94 n m mounting torque, m4 terminal C 0.98~1.47 n m weight C 400 grams isolation voltage (main terminal to baseplate, ac 1 min.) v iso 2500 vrms * pulse width and repetition rate should be such that the device junction temperature (t j ) does not exceed t j(max) rating. **represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi). static electrical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units collector-cutoff current i ces v ce = v ces , v ge = 0v C C 1.0 ma gate leakage current i ges v ge = v ges , v ce = 0v C C 0.5 m a gate-emitter threshold voltage v ge(th) i c = 20ma, v ce = 10v 4.5 6.0 7.5 volts collector-emitter saturation voltage v ce(sat) i c = 200a, v ge = 15v C 2.5 3.4** volts i c = 200a, v ge = 15v, t j = 150 c C 2.25 C volts total gate charge q g v cc = 600v, i c = 200a, v ge = 15v C 1000 C nc emitter-collector voltage v ec i e = 200a, v ge = 0v C C 3.4 volts ** pulse width and repetition rate should be such that device junction temperature rise is negligible. dynamic electrical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units input capacitance c ies C C 40 nf output capacitance c oes v ge = 0v, v ce = 10v C C 14 nf reverse transfer capacitance c res C C 8 nf resistive turn-on delay time t d(on) C C 250 ns load rise time t r v cc = 600v, i c = 200a, C C 400 ns switching turn-off delay time t d(off) v ge1 = v ge2 = 15v, r g = 1.6 w C C 300 ns times fall time t f C C 350 ns diode reverse recovery time t rr i e = 200a, di e /dt = C400a/ m s C C 250 ns diode reverse recovery charge q rr i e = 200a, di e /dt = C400a/ m s C 1.49 C m c thermal and mechanical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units thermal resistance, junction to case r th(j-c) per igbt C C 0.085 c/w thermal resistance, junction to case r th(j-c) per fwdi C C 0.18 c/w contact thermal resistance r th(c-f) per module, thermal grease applied C C 0.040 c/w mitsubishi igbt modules CM200HA-24H high power switching use insulated type
sep.2000 mitsubishi igbt modules CM200HA-24H high power switching use insulated type collector-emitter voltage, v ce , (volts) collector current, i c , (amperes) output characteristics (typical) 0246810 240 80 0 v ge = 20v 15 12 11 8 7 t j = 25 o c 160 320 400 10 9 gate-emitter voltage, v ge , (volts) collector current, i c , (amperes) transfer characteristics (typical) 048121620 320 240 160 80 0 v ce = 10v t j = 25 c t j = 125 c 400 collector-current, i c , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts) collector-emitter saturation voltage characteristics (typical) 5 0 80 160 240 320 4 3 2 1 0 400 v ge = 15v t j = 25 c t j = 125 c emitter-collector voltage, v ec , (volts) free-wheel diode forward characteristics (typical) emitter current, i e , (amperes) collector-emitter voltage, v ce , (volts) capacitance, c ies , c oes , c res , (nf) capacitance vs. v ce (typical) 10 -1 10 0 10 2 10 2 10 1 10 0 10 -1 v ge = 0v 10 1 c ies c oes c res emitter current, i e , (amperes) reverse recovery time, t rr , (ns) reverse recovery characteristics (typical) 10 3 10 1 10 2 10 3 10 2 10 1 t rr i rr di/dt = -400a/ m sec t j = 25 c 10 2 10 1 10 0 reverse recovery current, i rr , (amperes) gate charge, q g , (nc) gate-emitter voltage, v ge , (volts) gate charge, v ge 20 0 400 800 16 12 8 4 0 1200 1600 v cc = 600v v cc = 400v i c = 200a gate-emitter voltage, v ge , (volts) collector-emitter saturation voltage, v ce(sat) , (volts) collector-emitter saturation voltage characteristics (typical) 10 048121620 8 6 4 2 0 t j = 25 c i c = 80a i c = 400a i c = 200a collector current, i c , (amperes) 10 1 10 2 10 3 10 3 10 2 10 1 t d(off) t d(on) t r v cc = 600v v ge = 15v r g = 1.6 w t j = 125 c t f switching time, (ns) half-bridge switching characteristics (typical) 10 3 10 2 10 1 7 5 3 2 1.0 1.5 2.0 7 5 3 2 2.5 3.0 3.5 t j = 25 c
sep.2000 mitsubishi igbt modules CM200HA-24H high power switching use insulated type time, (s) normalized transient thermal impedance, z th(j-c) transient thermal impedance characteristics (igbt) 10 1 10 -5 10 -4 10 -3 10 0 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 single pulse t c = 25 c per unit base = r th(j-c) = 0.085 c/w z th = r th ?(normalized value) 10 -1 10 -2 10 -3 time, (s) normalized transient thermal impedance, z th(j-c) transient thermal impedance characteristics (fwdi) 10 1 10 -5 10 -4 10 -3 10 0 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 single pulse t c = 25 c per unit base = r th(j-c) = 0.18 c/w z th = r th ?(normalized value) 10 -1 10 -2 10 -3
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